Springer Handbook of Semiconductor Devices

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Springer Handbook of Semiconductor Devices

2023-09-18 18:45| 来源: 网络整理| 查看: 265

Massimo Rudan is Professor of Electronics at the University of Bologna. His research interests are in the field of physics of carrier transport and numerical analysis of semiconductor devices and solid-state sensors. He received a degree in Electrical Engineering in 1973 and a degree in Physics in 1976, both from the University of Bologna, Italy. In 1986 he has been a visiting scientist, on a one-year assignment, at the IBM Thomas J. Watson Research Center at Yorktown Heights, NY, studying the discretization techniques for the Boltzmann Transport Equation. In 1990 he became full professor at the University of Bologna. An IEEE Life Fellow, Massimo Rudan has coordinated several research projects funded by the European Commission, international Companies and Foundations, the National Council of Research, and the National Ministry of University and Research.

Rossella Brunetti is Professor of Condensed Matter Physics at the Department of Physics, Informatics and Mathematics of the University of Modena. Her research activity has mainly been focused on charge transport, in both semi-classical and quantum conditions, in semiconductor structures and devices. She received her Master degree cum laude in Physics in 1981, and the Ph. D. in Physics at the University of Modena, Italy, in 1987. Since 2002 she is associate professor at the same University. Rossella Brunetti has experience with a variety of numerical techniques which have been applied to validate theoretical models against experiments and to predict new effects. In the last years her research has focused on transport properties of chalcogenide materials in view of their applications in the field of emerging memory devices.

Susanna Reggiani is Professor at the School of Engineering of the University of Bologna. Her scientific activity has been devoted to the physics, modeling and characterization of electron devices, with special emphasis on transport models in semiconductors. She



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